| PART |
Description |
Maker |
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| A29L008UV-90 A29L008TV-90U A29L008TV-90 A29L008TV- |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory
1M X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory
1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
From old datasheet system
|
AMICC[AMIC Technology]
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
| MBM29LV160TM90 MBM29LV160BM90TN MBM29LV160BM90PBT |
FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM 闪存的CMOS 16米（2米x 8/1M × 16）位MirrorFlashTM
FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
|
| M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48
Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.2伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
|
| CAT28F512 CAT28F512TRI-12T CAT28F512TRI-15T CAT28F |
120ns 512K-bit CMOS flash memory
90ns 512K-bit CMOS flash memory
150ns 512K-bit CMOS flash memory
512K-Bit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| W39V080FA W39V080FAP W39V080FAT W39V080FAQZ W39V08 |
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PQCC32
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO40
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
Gate Driver; Package: PG-DSO-8; RthJA (max): -;
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位）的CMOS 3.0伏特，只有扇区擦除闪
CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位）的CMOS 3.0伏特，只有扇区擦除闪
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MX29LV004CBTI-55Q MX29LV004CTTI-55Q MX29LV002CTTC- |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 8 FLASH 3V PROM, 55 ns, PDSO40
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 8 FLASH 3V PROM, 90 ns, PDSO32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 8 FLASH 3V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
